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| 型号 | SPB80N03S2L-04 |
| 厂商 | Infineon Technologies |
| 描述 | MOSFET N-CH 30V 80A D2PAK |
| SPB80N03S2L-04 PDF |  |
| 代理商 | SPB80N03S2L-04 |
| 产品变化通告 | Product Discontinuation 26/Oct/2007 |
| 标准包装 | 1,000 |
| 系列 | OptiMOS™ |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 30V |
| 电流 - 连续漏极(Id) @ 25° C | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 3.9 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大） | 2V @ 130µA |
| 闸电荷(Qg) @ Vgs | 105nC @ 10V |
| 输入电容 (Ciss) @ Vds | 3900pF @ 25V |
| 功率 - 最大 | 188W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装 | P-TO263-3 |
| 包装 | 带卷 (TR) |
| 其它名称 | SP000013901 SPB80N03S2L04T |
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